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Electron Microscopy Sciences Graphene on Thermal SiO2 on Ultra-Flat Silicon, 3-5 layers, 1.0-1.7 nm thick, 85.8-90.4% Transparency
Supplier: Electron Microscopy Sciences 3GUFSIO210
CVD graphene on ultra-flat thermal SiO2. The high quality graphene is produced by chemical vapor deposition, a process by which gaseous reactants are deposited onto a substrate. The Ultra-flat Thermal SiO2 Substrate consists of a 200 nm thermally grown SiO2 film on an ultra-flat silicon wafer with a normal thickness of 675 um. The size is 5 mm x 5 mm. Graphene coverage of the TEM grid is better than 75 percent. Available in four thicknesses of CVD graphene, 1, 2, 3-5, and 6-8.
Layers: 3-5 layers
Thickness: 1.0-1.7 nm
Transparency: 85.8-90.4%
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