Sigma Aldrich Back-gated OFET Interdigitated Substrate

Catalog No.	Quantity
FIPMS223	1 pak

Catalog No. FIPMS223 Supplier Sigma Aldrich Supplier No. FIPMS2231PAK

Description

MilliporeSigma Sigma Organics products encompass a wide range of quality reagents, solvents, catalysts, and building blocks for organic synthesis. From benchtop discovery to process development and scale-up, Sigma Organics solutions are built to meet the needs of synthetic chemists.

Substrate: 150 mm wafer according to semiconductor standard (used for bottom-gate)Layer structure: Gate: n-doped silicon (doping at wafer surface: n∼3x1017/ cm3) Gate oxide: 90 nm +/- 10 nm SiO2 (thermal oxidation) Drain/source: 30 nm Au with 10 nm high work function adhesion layer (ITO), by lift-off technique Protection: resist AR PC 5000/3.1 (soluble in AZ-Thinner or acetone) Layout: see images Test chip size: 15 x 15 mm2 No. of chips: 60 per waferContact pads: 0.5 x 0.5 mm2 No. of transistors: 16 per wafer 4 x transistors L= 2.5 mum W= 10 mm 4 x transistors L= 5 mum W= 10 mm 4 x transistors L= 10 mum W= 10 mm 4 x transistors L= 20 mum W= 10 mmBack-gated OFET Interdigitated Substrate (organic field-effect transistor) can be used in the fabrication of chemical sensors for potential usage in pH sensing and detection of immunoassays. It can also be used in the fabrication of biosensors by coating the sheets of the FET with a specific antibody for the detection of SARS-CoV-2. FET based biosensors can be potentially used in clinical diagnosis, point of care testing, and on-site detection.Product of Fraunhofer IPMS

Specifications

• Quantity: 1 pak