Sigma Aldrich Back-gated OFET Substrate

Catalog No.	Quantity
FIPMS176	1 pak

Catalog No. FIPMS176 Supplier Sigma Aldrich Supplier No. FIPMS1761PAK

Description

MilliporeSigma Sigma Organics products encompass a wide range of quality reagents, solvents, catalysts, and building blocks for organic synthesis. From benchtop discovery to process development and scale-up, Sigma Organics solutions are built to meet the needs of synthetic chemists.

Substrate: 150 mm wafer according to semiconductor standard (used for bottom-gate)Layer structure: Gate: n-doped silicon (doping at wafer surface: n∼3x1017/ cm3) Gate oxide: 230 nm +/- 10 nm SiO2 (thermal oxidation) Drain/source:none Protection: resist AR PC 5000/3.1 (soluble in AZ-Thinner or acetone) Layout: bare oxide but diced Chip size: 15 x 15 mm2 No. of chips: 60 per waferFor material scientists in the field of organic semiconductors, it is critically important to have standardized device architecture for material analysis.These back-gated organic filed-effect transistor (OFET) substrates were fabricated inside the cleanroom, and source and drain electrodes can be deposited either prior or after the deposition of an organic semiconductor material, giving versatility for the choice of source/drain materials and satisfy different preferred device architectures.When an organic semiconductor layer is deposited on such a substrate, the bulk Si acts as gate electrode and controls the channel current between the post-deposited source and drain electrodes on the top. A suitably doped Si-SiO2 interface in CMOS quality guarantees a reproducible gate contact.Product of Fraunhofer IPMS

Specifications

• Quantity: 1 pak